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~ Emitter Follower Gain & Noise Calculator ~

Calculates the root mean square value of the Noise Voltage VN(rms) at the Output of an Emitter follower [Common Collector Amplifier] ~ Are emitter followers noisy when used as input to pre-amplifiers ? ~ If the output impedance presented to the next stage is lower than RS but the SNR is not affected very much is this an advantage ?

 

The Calculation does not take into account flicker noise and assumes perfect resistive loads and a modern silicon transistor with low noise bias and the transistor gain is constant within the measurement bandwidth defined

The circled nodes B C and E represent the external connections of the transistor and lower case rbb and re and ro are internal resistances but only rbb produces thermal noise ~ ro is included in the calculation but if not known assume its value is >1MΩ although for some PNP transistors it may be much lower

Start by entering a Collector Current and change other variables as required

Boltzmann Constant — k 1.38062×10-23  J/K [ joules/kelvin ]
Charge on a single Electron — q 1.60218×10-19 C [ coulomb or amperes/sec]
Base bias Resistor — RB Ω [ Base bias total resistance ]
Emitter Resistor — RE Ω [ affects input resistance Rin ]
Follower Load Resistor — RL Ω [ affects input resistance Rin ]
Source Resistor — RS Ω
Internal output Resistance — ro Ω
Intrinsic Base Resistance — rbb' Ω [ resistive base material produces thermal noise ]
Transistor d.c. current gain — β   [ also hFE or 'beta' in some texts ]
Collector Current — IC mA        Output Significant Figures 
Device Temperature — T ˚C [ calculation uses ˚K ]
Noise Bandwidth — Bn Hz          Input Signal  VS
Calculated results using the values entered above
Signal to Noise Ratio  — SNR dB = 20 log (GVVS/VNtot)     [SNROUT]
Maximum SNR due to RS alone dB = 20 log (VS/√4 k T Bn RS  )   [SNRIN]
Noise Figure — NF dB = SNRIN – SNROUT
Emitter Internal Resistance — re Ω = VT/IC      VT = kT/q = mV
Common base current gain — α = IC/(IC+IB)    IB = IC/β = µA
Amplifier input impedance — RIN kΩ = RB∥ [ (rbb'+(1 + β) (re+RE∥RL∥ro) ]
Amplifier output impedance — RO Ω = (RE∥ro) ∥ [ (RS∥RB+rbb')/(1+β)+re ]
Voltage Gain — AV V/V = (RE∥RL∥ro) / (re+RE∥RL∥ro)
Amplifier Voltage Gain — GV V/V = AV RIN /(RS+RIN)
Noise due to RS∥RB — VNRS nVrms = √4 k T BnRS∥RB × AV nV/√Hz
Noise due to rbb — VNrbb' nVrms = √4 k T Bn rbb' × AV   nV/√Hz
Noise due to RL∥Ro — VNRo nVrms = √4 k T Bn RL∥Ro    nV/√Hz
Noise due to IB through re — VNIB nVrms = √2 q IB Bn × (RS∥RB+rbb'–re) × AV
Noise due to IC through re — VNIC nVrms = √2 q IC Bn × (RE∥RL∥ro∥re)
Total Noise V at Output — VNtot µVrms = √NRS+ V²Nrbb'+ V²NRo+ V²NIB+ V²NIC

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Keith Snook Transistor Noise references See these references for more about transistor noise :

The Art of Electronics 3rd edition chapter 8 ~ By Paul Horowitz and Winfield Hill
Noise in Transistor Circuits ~ By P. J. Baxandall ~ Wireless World November 1968
Designing low–noise audio amplifiers ~ By Wilfried Adam ~ Wireless World June 1989
Introduction to low–noise amplifier design ~ By A. Foord ~ Wireless World April 1981
The design of Low-noise audio frequency amplifiers ~ By E. A. Faulkner ~ The Radio and Electronic Engineer July 1968 ~ This excellent article along with the book 'Low-Noise Electronic System Design' By C. D. Motchenbacher and J. A. Connelly should answer most questions about electronic noise


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